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chm1080 - 98f ref. : dschm10803329 - 25 nov 13 1 / 16 specifications subject to change without notice united mono lithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 71 - 86ghz single side band mixer gaas monolithic microwave ic description the chm1080 - 98f is a multifunction monolithic mix er, which integrates a balanced sub - harmonic cold fet mixer, with a lo buffer . it is usable both for up - conversion and down - conversion and also compatible with baseband configuration. it is designed for the e - band telecommunication application , particularly well suited for the new generation of high capacity backhaul. the circuit is manufac tured with a phemt process, 0.10 m ga te length . it is available in chip form . main features conversion gain main electrical characteristics tamb. = + 25c symbol parameter min typ max unit f rf rf frequency 71 86 ghz f if if frequency dc 12 ghz g c conversion gain - 11 db rfin p1db rf input power @1db comp. 10 dbm d gx g lo_in rf q i - 15 - 14 - 13 - 12 - 11 - 10 - 9 - 8 - 7 - 6 - 5 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 conversion gain (db) rf frequency (ghz) usb lsb
chm1080 - 98f 71 - 86ghz single side band mixer ref. : dschm10803329 - 25 nov 13 2 / 16 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb. = + 25c , vd = 3.5 v symbol parameter min typ max unit f rf rf f requency range 71 86 ghz f lo lo f requency range 34.5 44 ghz f if if output frequency dc 6 12 ghz p lo lo input p ower 2 dbm gc conversion gain (1) - 11 db r_lo lo input return loss 10 db lo/ rf lo isolation on rf port 17 db 2lo/ rf 2lo isolation on rf port 16 db 2lo/ rf 2lo isolation on rf port with dc voltage on i/ q ( v _ i & v_q) (2) 40 db im _rej image rejection (1) 15 dbc ifin p1db if input power @1db comp. 0 dbm rfin p1db rf input power @1db comp. 10 dbm v_i & v_q dc voltage on i & q (3) - 500 500 mv id drain current (id lo buffer) (4) 90 ma d dc drain voltage (lo buffer) 3.5 v g dc gate voltage (lo buffer ) - 2.2 v gx mixer dc gate voltage - 2 v (1) an external combiner 90 is required on i / q. (2) in baseband configuration, a dc voltage on i & q could be applied to cancel the 2lo leakage (3) v_i & v_q should be tu ned independently for each frequency, temperature (4) lo buffer quiescent current 85ma these values are representative of on - wafer measurements that are made without bonding wires at the rf & lo ports. a ribbon (75 m wide) connection at the rf and lo inpu ts (see chapter recommended chip assembly) could improve the results.
71 - 86ghz single side band mixer chm1080 - 98f ref. : dschm10803329 - 25 nov 13 3 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 4v v id drain bias quiescent current 120 ma vg, vgx gate bias voltage - 3 to - 0.2 v pin_lo maximum lo peak input power overdrive (2) +10 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. typical bias conditions tamb.= + 25c pad name pad n o parameter typical values unit g 9 lo buffer dc gate voltage (1) - 2.2 v d 7 lo buffer dc drain voltage ( 85 ma) 3.5 v gx 8 mixer dc gate voltage - 2 v 6, 7 not connected (1) g ate voltage shoul d be adjusted to reach 85ma through pad d.
chm1080 - 98f 71 - 86ghz single side band mixer ref. : dschm10803329 - 25 nov 13 4 / 16 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements as down converter tamb.= +25c, vd = +3.5v measurement conditions, base line : gx= - 2v, pin_rf= - 15d bm, pin_lo= 2dbm, if frequency = 10ghz g tuned for id_lo= 85 ma ( g close to - 2.2v) usb: rf= 2lo+ if; lsb: rf= 2lo - if measure with external if 90 hybrid conversion gain versus rf frequency & mixer voltage gx - 15 - 14 - 13 - 12 - 11 - 10 - 9 - 8 - 7 - 6 - 5 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 conversion gain (db) rf frequency (ghz) lsb; gx= - 2v lsb; gx= - 1.8v lsb; gx= - 1.6v usb; gx= - 2v usb; gx= - 1.8v usb; gx= - 1.6v
71 - 86ghz single side band mixer chm1080 - 98f ref. : dschm10803329 - 25 nov 13 5 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements as down converter tamb.= +25c, vd = +3.5v image rejection versus rf frequency & mixer voltage gx lo isolation versus lo frequency 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 image rejection (dbc) rf frequency (ghz) lsb; gx= - 2v usb; gx= - 2v gx= - 1.8v gx= - 1.8v gx= - 1.6v gx= - 1.6v 0 5 10 15 20 25 30 35 40 45 50 35 36 37 38 39 40 41 42 43 44 2lo/ rf (db) lo frequency (ghz)
chm1080 - 98f 71 - 86ghz single side band mixer ref. : dschm10803329 - 25 nov 13 6 / 16 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements as down converter tamb.= +25c, vd = +3.5v note: m easure d without external if 9 0 hybrid conversion gain versus rf frequency & if frequency - 18 - 17 - 16 - 15 - 14 - 13 - 12 - 11 - 10 - 9 - 8 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 conversion gain (db) rf frequency (ghz) if= 6ghz if= 10ghz if= 12ghz
71 - 86ghz single side band mixer chm1080 - 98f ref. : dschm10803329 - 25 nov 13 7 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements as up converter tamb.= +25c, vd = +3.5v measurement conditions, base line : gx= - 2v, pin_if= - 10dbm, pin_lo= 2dbm, if frequency = 6ghz g tuned fo r id_lo= 85 ma ( g close to - 2.2v) usb: rf= 2lo+ if; lsb: rf= 2lo - if measure with external if 90 hybrid conversion gain versus rf frequency - 15 - 14 - 13 - 12 - 11 - 10 - 9 - 8 - 7 - 6 - 5 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 conversion gain (db) rf frequency (ghz) usb lsb
chm1080 - 98f 71 - 86ghz single side band mixer ref. : dschm10803329 - 25 nov 13 8 / 16 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements as up converter tamb.= +25c, vd = +3.5v image rejection versus rf f requency isolation versus lo frequency 0 5 10 15 20 25 30 35 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 image rejection (dbc) rf frequency (ghz) lsb usb 0 5 10 15 20 25 30 35 37 38 39 40 41 42 isolation (db) lo frequency (ghz) 2lo/ rf lo/ rf
71 - 86ghz single side band mixer chm1080 - 98f ref. : dschm10803329 - 25 nov 13 9 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements as up converter tamb.= +25c, vd = +3.5v conversion gain versus lo power 2lo leakage versus lo power conversion gain versus mixer voltage 2lo leakage versus mixer voltage conversion gain & lo buffer current versus lo buffer voltage g 2lo leakage vs lo buffer voltage - 30 - 28 - 26 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 conversion gain (db) lo power (dbm) rf= 81ghz usb rf= 86ghz usb rf= 71ghz lsb rf= 76ghz lsb - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 6 2lo / rf (dbm) lo power (dbm) lo= 37.5ghz lo= 38ghz lo= 38.5ghz lo= 39ghz lo= 39.5ghz lo= 40ghz lo= 40.5ghz lo= 41ghz - 30 - 28 - 26 - 24 - 22 - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 3 - 2.8 - 2.6 - 2.4 - 2.2 - 2 - 1.8 - 1.6 - 1.4 - 1.2 - 1 - 0.8 - 0.6 conversion gain (db) gx voltage(v) rf= 81ghz usb rf= 86ghz usb rf= 71ghz lsb rf= 76ghz lsb - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 - 3 - 2.8 - 2.6 - 2.4 - 2.2 - 2 - 1.8 - 1.6 - 1.4 - 1.2 - 1 - 0.8 - 0.6 2lo / rf (dbm) gx voltage (v) lo= 37.5ghz lo= 38ghz lo= 38.5ghz lo= 39ghz lo= 39.5ghz lo= 40ghz lo= 40.5ghz lo= 41ghz 50 60 70 80 90 100 110 120 - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 2.6 - 2.4 - 2.2 - 2 - 1.8 - 1.6 - 1.4 lo buffer current (ma) conversion gain (db) g voltage (v) rf= 81ghz usb rf= 86ghz usb id_lo - 50 - 45 - 40 - 35 - 30 - 25 - 20 - 15 - 10 - 5 - 2.6 - 2.4 - 2.2 - 2 - 1.8 - 1.6 - 1.4 2lo / rf (dbm) g voltage (v) lo= 37.5ghz lo= 38ghz lo= 38.5ghz lo=39ghz lo= 39.5ghz lo= 40ghz
chm1080 - 98f 71 - 86ghz single side band mixer ref. : dschm10803329 - 25 nov 13 10 / 16 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements as up converter tamb.= +25c, vd = +3.5v input power compression versus rf frequency lo ret urn loss versus frequency - 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 input power compression (dbm) rf frequency (ghz) p_lo= 0dbm p_lo= 2dbm - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 lo input return loss (db) lo frequency (ghz)
71 - 86ghz single side band mixer chm1080 - 98f ref. : dschm10803329 - 25 nov 13 11 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on wafer measurements in baseband configuration tamb.= +25c, vd = +3.5v measure with low if at 10mhz, with 90 between i and q signal gx= - 2v, pin_if= - 10dbm, pin_lo= 2dbm g tuned for id_lo= 85 ma ( g close to - 2. 2v) conversion gain & image rejection versus rf frequency isolation versus lo frequency (1) (1) in baseband configuration, a dc voltage on i & q could be applied to cancel the 2lo leakage. v_ v_i & v_q should be tuned independently for each fre quency and temperature. - 10 - 6 - 2 2 6 10 14 18 22 26 30 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 conversion gain & image rejection (db & dbc) rf frequency (ghz) usb lsb image rejection usb image rejection lsb 0 5 10 15 20 25 30 35 40 45 50 55 60 35 36 37 38 39 40 41 42 43 lo isolation (db) lo frequency (ghz) 2lo/ rf without dc voltage 2lo/ rf with dc voltage lo/ rf
chm1080 - 98f 71 - 86ghz single side band mixer ref. : dschm10803329 - 25 nov 13 12 / 16 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 70m. chip size: 3430 x150 0 35m all dimensions are in micrometers rf pads = 108 x 106 (bcb opening) dc pads = 86 x 83 (bcb opening) recommended circuit bonding table pin number p in name description decoupling 1 lo lo in 2 i if (i) 3 q if (q) 4 rf rf in - out 5 gx dc mixer gate voltage ( - 2v) 120pf, 10nf 6, 7 not connected 8 d dc lo buffer drain voltage (3.5v) 120pf, 10nf 9 g dc lo buffer gate voltage ( - 2 .2v) 120pf, 10nf
71 - 86ghz single side band mixer chm1080 - 98f ref. : dschm10803329 - 25 nov 13 13 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan the design integrates a half ribbon (75m wide) connection at the rf and lo input of the mmic amplifier compliant with a 50ohm line on gaas mmic. circuits having to be as close as possible to each ot her, the ribbon length must be reduced to the achievable minimum (160m gap between two chips is considered) and the loop height must also be the smallest realizable (80m). a second solution is the use of double wires (? 25m). in this case, a minimum o f two wires and the same chip to chip distance than ribbon solution are necessary to reduce the inductance effect. nevertheless, simulations have demonstrated an improvement of rf performance for e - band frequency range with the use of ribbon connection ins tead of wire. regarding the connection of the dc pads, a 25m wedge bonding is preferred. ribbon(w75m,length330m ) mmic chm1080 hyper access 160m hyper access 85m gx d g lo rf i q 120pf 120pf 120pf 10nf 10nf 10nf to external if hybrid to vdd lo to vgg mixer to vgg lo 75m ribbon 160m gap 50 ? line
chm1080 - 98f 71 - 86ghz single side band mixer ref. : dschm10803329 - 25 nov 13 14 / 16 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic lo buffer: 3.5v, 85 ma 42ma 8 ? ? ? 22ma 20 ? 345 ? ? g 30 ? 21ma 20 ? ? ? ? 30 ? d 6.5 ?
71 - 86ghz single side band mixer chm1080 - 98f ref. : dschm10803329 - 25 nov 13 15 / 16 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 notes
chm1080 - 98f 71 - 86ghz single side band mixer ref. : dschm10803329 - 25 nov 13 16 / 16 specifications subject to change without notice bat. c harmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2 011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . ordering information ch ip form : chm1080 - 98f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such informatio n nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned i n this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support device s or systems without express written approval from united monolithic semiconductors s.a.s.

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